STGP7NB60HDFP IGBT Transistor

The STGP7NB60HDFP is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGP7NB60HDFP transistor as follows.

STGP7NB60HDFP Transistor Specification

Transistor Code		STGP7NB60HDFP
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISO220
Collector Power Dissipation (Maximum)	Pc	35W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		560pF
Rise Time		15

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