STGP35HF60W IGBT Transistor

The STGP35HF60W is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGP35HF60W transistor as follows.

STGP35HF60W Transistor Specification

Transistor Code		STGP35HF60W
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		235
Rise Time		15

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