STGP30H65F IGBT Transistor

The STGP30H65F is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGP30H65F transistor as follows.

STGP30H65F Transistor Specification

Transistor Code		STGP30H65F
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		130
Rise Time		15

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