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STGP19NC60SD IGBT Transistor

The STGP19NC60SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGP19NC60SD transistor as follows.

Circuit diagram symbol of the STGP19NC60SD transistor

STGP19NC60SD Transistor Specification

Transistor Code STGP19NC60SD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 130W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.35V
Collector Current (Maximum) IC 12A

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