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STGP10NB60SD IGBT Transistor

The STGP10NB60SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGP10NB60SD transistor as follows.

Circuit diagram symbol of the STGP10NB60SD transistor

STGP10NB60SD Transistor Specification

Transistor Code STGP10NB60SD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 80W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.25V
Collector Current (Maximum) IC 10A

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