STGP10NB60SD IGBT Transistor

The STGP10NB60SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGP10NB60SD transistor as follows.

STGP10NB60SD Transistor Specification

Transistor Code		STGP10NB60SD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	80W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.25V
Collector Current (Maximum)	IC	10A

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