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STGFW30NC60V IGBT Transistor

The STGFW30NC60V is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGFW30NC60V transistor as follows.

Circuit diagram symbol of the STGFW30NC60V transistor

STGFW30NC60V Transistor Specification

Transistor Code STGFW30NC60V
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PF
Collector Power Dissipation (Maximum) Pc 80W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 36A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 225
Rise Time 11

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