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STGFW30H65FB IGBT Transistor

The STGFW30H65FB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGFW30H65FB transistor as follows.

Circuit diagram symbol of the STGFW30H65FB transistor

STGFW30H65FB Transistor Specification

Transistor Code STGFW30H65FB
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PF
Collector Power Dissipation (Maximum) Pc 58W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.65V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 101
Rise Time 14.6

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