STGFW30H65FB IGBT Transistor

The STGFW30H65FB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGFW30H65FB transistor as follows.

STGFW30H65FB Transistor Specification

Transistor Code		STGFW30H65FB
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PF
Collector Power Dissipation (Maximum)	Pc	58W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		101
Rise Time		14.6

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