STGF10NB60SD IGBT Transistor

The STGF10NB60SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGF10NB60SD transistor as follows.

STGF10NB60SD Transistor Specification

Transistor Code		STGF10NB60SD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220FP
Collector Power Dissipation (Maximum)	Pc	25W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.25V
Collector Current (Maximum)	IC	10A

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