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STGE50NC60VD IGBT Transistor

The STGE50NC60VD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGE50NC60VD transistor as follows.

Circuit diagram symbol of the STGE50NC60VD transistor

STGE50NC60VD Transistor Specification

Transistor Code STGE50NC60VD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOTOP
Collector Power Dissipation (Maximum) Pc 260W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 40A

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