STGE200NB60S IGBT Transistor

The STGE200NB60S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGE200NB60S transistor as follows.

STGE200NB60S Transistor Specification

Transistor Code		STGE200NB60S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOTOP
Collector Power Dissipation (Maximum)	Pc	600W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.2V
Collector Current (Maximum)	IC	150A

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