STGD7NB60S IGBT Transistor

The STGD7NB60S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGD7NB60S transistor as follows.

STGD7NB60S Transistor Specification

Transistor Code		STGD7NB60S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK
Collector Power Dissipation (Maximum)	Pc	55W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.1V
Collector Current (Maximum)	IC	7A

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