STGD7NB60H IGBT Transistor

The STGD7NB60H is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGD7NB60H transistor as follows.

STGD7NB60H Transistor Specification

Transistor Code		STGD7NB60H
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252
Collector Power Dissipation (Maximum)	Pc	55W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		560pF
Rise Time		15

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