STGD3NC120H IGBT Transistor

The STGD3NC120H is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGD3NC120H transistor as follows.

STGD3NC120H Transistor Specification

Transistor Code		STGD3NC120H
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO251
Collector Power Dissipation (Maximum)	Pc	105W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		45
Rise Time		3.5

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