STGD3NB60S IGBT Transistor

The STGD3NB60S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGD3NB60S transistor as follows.

STGD3NB60S Transistor Specification

Transistor Code		STGD3NB60S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252
Collector Power Dissipation (Maximum)	Pc	40W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		255pF
Rise Time		170

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