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STGD18N40LZ IGBT Transistor

The STGD18N40LZ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGD18N40LZ transistor as follows.

Circuit diagram symbol of the STGD18N40LZ transistor

STGD18N40LZ Transistor Specification

Transistor Code STGD18N40LZ
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package DPAK_IPAK
Collector Power Dissipation (Maximum) Pc 125W
Collector-Emitter Voltage (Maximum) VCE 390V
Collector-Emitter Saturation Voltage VCE(on) 1.3V
Collector Current (Maximum) IC 10A

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