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STGD10NC60S IGBT Transistor

The STGD10NC60S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGD10NC60S transistor as follows.

Circuit diagram symbol of the STGD10NC60S transistor

STGD10NC60S Transistor Specification

Transistor Code STGD10NC60S
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package DPAK
Collector Power Dissipation (Maximum) Pc 60W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.45V
Collector Current (Maximum) IC 5A

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