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STGB8NC60KD IGBT Transistor

The STGB8NC60KD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB8NC60KD transistor as follows.

Circuit diagram symbol of the STGB8NC60KD transistor

STGB8NC60KD Transistor Specification

Transistor Code STGB8NC60KD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package D2PAK
Collector Power Dissipation (Maximum) Pc 65W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 3A

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