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STGB7NB60HD IGBT Transistor

The STGB7NB60HD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB7NB60HD transistor as follows.

Circuit diagram symbol of the STGB7NB60HD transistor

STGB7NB60HD Transistor Specification

Transistor Code STGB7NB60HD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package D2PAK
Collector Power Dissipation (Maximum) Pc 80W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.8V
Collector Current (Maximum) IC 14A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 390pF
Rise Time 15

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