STGB7H60DF IGBT Transistor

The STGB7H60DF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB7H60DF transistor as follows.

STGB7H60DF Transistor Specification

Transistor Code		STGB7H60DF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	88W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		51
Rise Time		12.2

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