STGB3NB60SD IGBT Transistor

The STGB3NB60SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB3NB60SD transistor as follows.

STGB3NB60SD Transistor Specification

Transistor Code		STGB3NB60SD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK
Collector Power Dissipation (Maximum)	Pc	70W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.1V
Collector Current (Maximum)	IC	3A

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