STGB3NB60HD IGBT Transistor

The STGB3NB60HD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB3NB60HD transistor as follows.

STGB3NB60HD Transistor Specification

Transistor Code		STGB3NB60HD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK
Collector Power Dissipation (Maximum)	Pc	70W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		235pF
Rise Time		16

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