STGB30NB60H IGBT Transistor

The STGB30NB60H is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB30NB60H transistor as follows.

STGB30NB60H Transistor Specification

Transistor Code		STGB30NB60H
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	190W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		2300pF
Rise Time		15

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