STGB30H60DF IGBT Transistor

The STGB30H60DF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB30H60DF transistor as follows.

STGB30H60DF Transistor Specification

Transistor Code		STGB30H60DF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		120

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