STGB20NB32LZ IGBT Transistor

The STGB20NB32LZ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB20NB32LZ transistor as follows.

STGB20NB32LZ Transistor Specification

Transistor Code		STGB20NB32LZ
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	380V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		2300pF
Rise Time		2300

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