STGB20H60DF IGBT Transistor

The STGB20H60DF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB20H60DF transistor as follows.

STGB20H60DF Transistor Specification

Transistor Code		STGB20H60DF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	210W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		110
Rise Time		11.9

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