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STGB19NC60S IGBT Transistor

The STGB19NC60S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB19NC60S transistor as follows.

Circuit diagram symbol of the STGB19NC60S transistor

STGB19NC60S Transistor Specification

Transistor Code STGB19NC60S
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package D2PAK
Collector Power Dissipation (Maximum) Pc 130W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.35V
Collector Current (Maximum) IC 12A

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