STGB10NB60S IGBT Transistor

The STGB10NB60S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB10NB60S transistor as follows.

STGB10NB60S Transistor Specification

Transistor Code		STGB10NB60S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK
Collector Power Dissipation (Maximum)	Pc	80W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.25V
Collector Current (Maximum)	IC	10A

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