STGB10NB37LZ IGBT Transistor

The STGB10NB37LZ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB10NB37LZ transistor as follows.

STGB10NB37LZ Transistor Specification

Transistor Code		STGB10NB37LZ
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	16V
Collector-Emitter Saturation Voltage	VCE(on)	1.3V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1700pF
Rise Time		520

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