STGB10N60L IGBT Transistor

The STGB10N60L is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB10N60L transistor as follows.

STGB10N60L Transistor Specification

Transistor Code		STGB10N60L
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	15V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1800pF
Rise Time		700

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