STGB10H60DF IGBT Transistor

The STGB10H60DF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB10H60DF transistor as follows.

STGB10H60DF Transistor Specification

Transistor Code		STGB10H60DF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	115W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		60
Rise Time		6.9

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