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SSM20G45EGJ IGBT Transistor

The SSM20G45EGJ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SSM20G45EGJ transistor as follows.

Circuit diagram symbol of the SSM20G45EGJ transistor

SSM20G45EGJ Transistor Specification

Transistor Code SSM20G45EGJ
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO251
Collector Power Dissipation (Maximum) Pc 20W
Collector-Emitter Voltage (Maximum) VCE 450V
Gate-Emitter Voltage (Maximum) VGE 6V
Collector-Emitter Saturation Voltage VCE(on) 5V
Collector Current (Maximum) IC 130(PULSE)A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 145
Rise Time 72

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