SSIG20N135H IGBT Transistor

The SSIG20N135H is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SSIG20N135H transistor as follows.

SSIG20N135H Transistor Specification

Transistor Code		SSIG20N135H
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	310W
Collector-Emitter Voltage (Maximum)	VCE	1350V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		70

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