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SPM1001 IGBT Transistor

The SPM1001 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SPM1001 transistor as follows.

Circuit diagram symbol of the SPM1001 transistor

SPM1001 Transistor Specification

Transistor Code SPM1001
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 28A
Operating Junction Temperature (Maximum) 150 oC

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