SNG40660 IGBT Transistor

The SNG40660 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SNG40660 transistor as follows.

SNG40660 Transistor Specification

Transistor Code		SNG40660
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO258
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		700

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