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SNG301010 IGBT Transistor

The SNG301010 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SNG301010 transistor as follows.

Circuit diagram symbol of the SNG301010 transistor

SNG301010 Transistor Specification

Transistor Code SNG301010
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO257
Collector Power Dissipation (Maximum) Pc 60W
Collector-Emitter Voltage (Maximum) VCE 1000V
Collector-Emitter Saturation Voltage VCE(on) 3.5V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 550

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