SNG201017 IGBT Transistor

The SNG201017 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SNG201017 transistor as follows.

SNG201017 Transistor Specification

Transistor Code		SNG201017
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO254
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector-Emitter Saturation Voltage	VCE(on)	3.5V
Collector Current (Maximum)	IC	17A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		500

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