SME6G10US60 IGBT Transistor

The SME6G10US60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SME6G10US60 transistor as follows.

SME6G10US60 Transistor Specification

Transistor Code		SME6G10US60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		17PM-BA
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		110

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