SME6G10US120 IGBT Transistor

The SME6G10US120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SME6G10US120 transistor as follows.

SME6G10US120 Transistor Specification

Transistor Code		SME6G10US120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		17PM-BA
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.4V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		150

UXPython is not the creator or an official representative of the SME6G10US120 IGBT transistor. You can download the official SME6G10US120 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXGH30N60B4 IGBT Transistor IXYP10N65C3D1M IGBT Transistor MMG75S170B6EN IGBT Transistor STGP30NC60K IGBT Transistor IXSQ20N60B2D1 IGBT Transistor APT33GF120BRG IGBT Transistor IXYP20N65B3 IGBT Transistor SNG201017 IGBT Transistor STGP20V60F IGBT Transistor VS-100MT060WSP IGBT Transistor HGTP10N50F1D IGBT Transistor IXGT32N170A IGBT Transistor RJH1CD7DPQ-E0 IGBT Transistor VKI75-06P1 IGBT Transistor DM2G100SH12A IGBT Transistor TGPF30N43P IGBT Transistor APT30GT60BRG IGBT Transistor HGTP12N60A4 IGBT Transistor MIXA100W1200TEH IGBT Transistor MIXA30WB1200TED IGBT Transistor