SMBL1G200US120 IGBT Transistor

The SMBL1G200US120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SMBL1G200US120 transistor as follows.

SMBL1G200US120 Transistor Specification

Transistor Code		SMBL1G200US120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7PM-EA
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.4V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		150

UXPython is not the creator or an official representative of the SMBL1G200US120 IGBT transistor. You can download the official SMBL1G200US120 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

SKW20N60 IGBT Transistor MMG150DR120B IGBT Transistor IRG4ZC71KD IGBT Transistor HGTP10N40E1D IGBT Transistor GA200SA60S IGBT Transistor IXGH48N60B3C1 IGBT Transistor MPMB50B120RH IGBT Transistor IXYK120N120B3 IGBT Transistor APTGF90DA60T IGBT Transistor MIAA10WB600TMH IGBT Transistor SKM600GA176D IGBT Transistor IXBK55N300 IGBT Transistor IRG7I313U IGBT Transistor APT27GA90K IGBT Transistor RJH60D6DPM IGBT Transistor VS-GB300AH120N IGBT Transistor APTGF50SK120T IGBT Transistor MMIX1G120N120A3V1 IGBT Transistor IXSK50N60BD1 IGBT Transistor CPV363M4KPBF IGBT Transistor