SKM900GA12E4 IGBT Transistor

The SKM900GA12E4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM900GA12E4 transistor as follows.

SKM900GA12E4 Transistor Specification

Transistor Code		SKM900GA12E4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.83V
Collector Current (Maximum)	IC	900A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		3520
Rise Time		100

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