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SKM75GAR063D IGBT Transistor

The SKM75GAR063D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM75GAR063D transistor as follows.

Circuit diagram symbol of the SKM75GAR063D transistor

SKM75GAR063D Transistor Specification

Transistor Code SKM75GAR063D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 500
Rise Time 50

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