SKM600GB066D IGBT Transistor

The SKM600GB066D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM600GB066D transistor as follows.

SKM600GB066D Transistor Specification

Transistor Code		SKM600GB066D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.45V
Collector Current (Maximum)	IC	760A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		2300
Rise Time		77

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