SKM600GA12V IGBT Transistor

The SKM600GA12V is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM600GA12V transistor as follows.

SKM600GA12V Transistor Specification

Transistor Code		SKM600GA12V
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.75V
Collector Current (Maximum)	IC	908A
Operating Junction Temperature (Maximum)		125 oC
Collector Capacitance		3550
Rise Time		85

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