SKM50GAL123D IGBT Transistor

The SKM50GAL123D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM50GAL123D transistor as follows.

SKM50GAL123D Transistor Specification

Transistor Code		SKM50GAL123D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	310W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC

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