SKM40GDL123D IGBT Transistor

The SKM40GDL123D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM40GDL123D transistor as follows.

SKM40GDL123D Transistor Specification

Transistor Code		SKM40GDL123D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	220W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3.1V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC

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