SKM300GAY123D IGBT Transistor

The SKM300GAY123D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM300GAY123D transistor as follows.

SKM300GAY123D Transistor Specification

Transistor Code		SKM300GAY123D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	1660W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	300A
Operating Junction Temperature (Maximum)		150 oC

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