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SKM200GB173D IGBT Transistor

The SKM200GB173D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM200GB173D transistor as follows.

Circuit diagram symbol of the SKM200GB173D transistor

SKM200GB173D Transistor Specification

Transistor Code SKM200GB173D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 1250W
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 3.8V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 150 oC

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