SKM200GAY173D IGBT Transistor

The SKM200GAY173D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM200GAY173D transistor as follows.

SKM200GAY173D Transistor Specification

Transistor Code		SKM200GAY173D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	1250W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Collector-Emitter Saturation Voltage	VCE(on)	3.8V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC

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