SKM200GAL173D IGBT Transistor

The SKM200GAL173D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM200GAL173D transistor as follows.

SKM200GAL173D Transistor Specification

Transistor Code		SKM200GAL173D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	1250W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Collector-Emitter Saturation Voltage	VCE(on)	3.8V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC

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