SKM200GAL123DKLD110 IGBT Transistor

The SKM200GAL123DKLD110 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM200GAL123DKLD110 transistor as follows.

SKM200GAL123DKLD110 Transistor Specification

Transistor Code		SKM200GAL123DKLD110
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1040W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	300A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		65

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